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Point-defect-induced colossal dielectric behavior in GaAs single crystals
Zhu, M.1; Zhang, N.1; Wang, H.1; Li, Y. D.1; Huang, S. G.1; Li, Q. J.1; Yu, Y.1; Guo, Y. M.1; Liu, X. L.2; Wang, C. C.1
2017
Source PublicationRSC ADVANCES
Volume7Issue:42Pages:26130-26135
SubtypeArticle
AbstractWe herein reported colossal dielectric constant CDC) behavior in GaAs single crystals. This behavior appears in the temperature range above room temperature and results from the bulk effect due to polaron relaxation caused by hopping motion of EL2 defects. When temperature rises higher than 420 K, the interfacial contribution due to Maxwell-Wagner relaxation caused by sample/ electrode contacts appears. When temperature is higher than 560 K, the CDC behavior is mainly contributed by the interfacial effect. These features are quite different from the CDC behavior found in oxides, and therefore, the CDC behavior in GaAs single crystals is considered as a new type of the CDC family. Our results underscore the role of point-defects in CDC behavior and suggest that defect engineering can be a promising strategy to achieve superior CDC behavior in both oxide and non-oxide materials.
WOS HeadingsScience & Technology ; Physical Sciences
Funding OrganizationNational Natural Science Foundation of China(51572001 ; National Natural Science Foundation of China(51572001 ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; 11404002 ; 11404002 ; 11404003) ; 11404003) ; National Natural Science Foundation of China(51572001 ; National Natural Science Foundation of China(51572001 ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; 11404002 ; 11404002 ; 11404003) ; 11404003)
DOI10.1039/c7ra00058h
WOS KeywordCONSTANT ; OXIDES ; FERROELECTRICS ; TEMPERATURE ; PERFORMANCE ; ELECTRONICS ; CERAMICS ; ORIGIN
Indexed BySCI
Language英语
Funding OrganizationNational Natural Science Foundation of China(51572001 ; National Natural Science Foundation of China(51572001 ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; 11404002 ; 11404002 ; 11404003) ; 11404003) ; National Natural Science Foundation of China(51572001 ; National Natural Science Foundation of China(51572001 ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; Weak Signal-Detecting Materials and Devices Integration of Anhui University(Y01008411) ; 11404002 ; 11404002 ; 11404003) ; 11404003)
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000401815800036
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.apm.ac.cn/handle/112942/11300
Collection磁共振应用研究部
Affiliation1.Anhui Univ, Sch Phys & Mat Sci, Lab Dielect Funct Mat, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom Mol Phys, Wuhan 430071, Peoples R China
Recommended Citation
GB/T 7714
Zhu, M.,Zhang, N.,Wang, H.,et al. Point-defect-induced colossal dielectric behavior in GaAs single crystals[J]. RSC ADVANCES,2017,7(42):26130-26135.
APA Zhu, M..,Zhang, N..,Wang, H..,Li, Y. D..,Huang, S. G..,...&Wang, C. C..(2017).Point-defect-induced colossal dielectric behavior in GaAs single crystals.RSC ADVANCES,7(42),26130-26135.
MLA Zhu, M.,et al."Point-defect-induced colossal dielectric behavior in GaAs single crystals".RSC ADVANCES 7.42(2017):26130-26135.
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